Discrete 650V CoolGaN Transistors

Infineon has launched opa new family of high-voltage discretes, the CoolGaN Transistors 650 V G5, further strengthening its GaN)p portfolio.

Target applications range from consumer and industrial switched-mode power supply (SMPS) such as USB-C adapters and chargers, lighting, TV, data center and telecom rectifiers to renewable energy and motor drives in home appliances.

The latest CoolGaN generation is designed as a drop-in replacement for the CoolGaN Transistors 600 V G1, enabling rapid redesign of existing platforms.

The devices provide improved figures of merit to ensure competitive switching performance in focus applications.

Compared to key competitors and previous product families from Infineon, the CoolGaN Transistors 650 V G5 claim to offer up to 50% lower energy stored in the output capacitance (E _oss), up to 60 percent improved drain-source charge (Q _oss) and up to 60% lower gate charge (Q _g).

Combined, these features result in excellent efficiencies in both hard- and soft-switching applications. This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case.

These benefits allow the devices to operate at high frequencies with minimal power loss, resulting in superior power density. The CoolGaN Transitors 650 V G5 enable SMPS applications to be smaller and lighter or to increase the output power range in a given form factor.

The new high-voltage transistor product family offers a wide range of R _DS(on) package combinations. Ten R _DS(on)classes are available in various SMD packages, such as ThinPAK 5×6, DFN 8×8 , TOLL and TOLT. All products are manufactured on high-performance 8-inch production lines in Villach (Austria) and Kulim (Malaysia